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INNOVAVENT GmbH (INNOVAVENT GmbH)

INNOVAVENT is the pioneer of the optical system which does the design, the manufacture of the optical system for solid state laser, consulting and a process development.
Specifically, it makes a specialized optical system for low temperature poly silicon TFT display. INNOVAVENT has proud of the essential technology as the key technology to the technical innovation of the next generation display device and the high density semiconductor device to the laser annealing process of the silicon.
There are many kind of solid state laser in the INNOVAVENT application lab for the studies and development of sample test in the combination of the laser and the optical system which is the optimal for each process.
An optical system is equipped with homogenizer which makes uniform and stabilization possible at the high level, and the irradiation system which combined a super high resolution projection lens, and the XYZ stage, the automatic focus, the energy monitor and the beam profiler.
The LAVA optical system can be achieve the image formation with 2 micron resolution and 8mm long beam by using high performance projection lens.
The VOLCANO optical system can irradiate more than 50mm long beam by using high performance cylindrical lens. It is also possible to make more than 100mm long beam for high energy solid state green laser.

♦ High Power Green Disk Laser JenLas ASAMA

Best laser for Si layer annealing for FPD and semiconductor device annealing process.
This laser can be change the pulse width between 250ns to 600ns individually from another parameter of laser specification. This is very important factor for Si crystallization and activation of semiconductor device.
The spectral bandwidth and M2 has been controlled to obtain very high level uniform beam with sufficient DOF to achieve superior result of quality and excellent process window.
The laser line up is available 80W model and 100W model. It can be select for suitable line beam length (8mm to 100mm) and type of process.

	ASAMA 100-2	ASAMA 80-8
Wavelength	515nm	515nm
Power, repetition rate	100W@50kHz	80W@10kHz
Pulse energy	2mJ	8mJ
Pulse length(FWHM)	250ns-600ns	250ns-600ns
Pulse-to-pulse power fluctuation(1δ)	<1%	<1%
Mx² / My²	4.5±0.7 / >15	4.5±0.7 / >15
Spectral bandwidth	>=200nm FWHM	>=200nm FWHM
Beam diameter (at laser exit, 1/e²)	2.2mm +/-0.5mm	2.2mm +/-0.5mm

High Power Green Disk Laser JenLas ASAMA

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♦ Crystallization of the thin a-Si films for FPD

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♦ Pulse Laser Full Melt and Partial Melt Process

<Pulsed Full Melt>
- Full melt directional lateral crystallization (ridge less process)

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♦ CW Laser SPC(Solid Phase a-Si Crystallization) and Full Melt

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<G8 concept>

Please contact about G8 high throughput concept:sales@optopia.co.jp

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♦ Throughput comparison of a-Si Laser annealing

Throughput @100W (Green Pulse, Green CW, Excimer laser)

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♦ LAVA and VOLCANO (for FPD Anneal and Semiconductor Anneal)

	LAVA 100	VOLCANO 80	VOLCANO 160	VOLCANO 600
Line width (gaussian)	5-40µm	5-40µm	5-10µm	50-100µm
Line length (flat)	2-8mm	Up to 55mm	Up to 100mm	1-5mm
Energy density/ Power density	Up to 4J/cm²	Up to 1500mJ/cm²	Up to 1500mJ/cm²	Up to 400kW/cm²
wevelength	515nm, 635nm (focus monitor)	515nm, 635nm (focus monitor)	515nm, 635nm (focus monitor)	808nm, 940nm
Laser power, Repetition rate	JenLas.® ASAMA 100W @ 50kHz	JenLas.® ASAMA 80W @ 10kHz	JenLas.® ASAMA 2 x 80W @ 10kHz	Diode laser stack 200-600W, cw
p-p power fluctuation(1ƒÐ)	<1%	<1%	<1%	n.s.
Pulse length	250ns-600ns	250ns-600ns	250ns-600ns	cw
p-lens	EAGLE Spherical lens type 10x, NA 0.25 FOV 10mm WD >35mm	FALCON Cylinder lens type 10x, NA 0.25 Clear apert. 70mm WD >35mm	FALCON Cylinder lens type 10x, NA 0.25 Clear apert. 120mm WD >35mm	FALCON Cylinder lens type 10x, NA 0.25

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Optics Module

Projection Lens

Latelal Growth Poly Silicon Layer

VOLCANO Optical Sub System

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♦ VOLCANO (for Semiconductor Anneal)

	VOLCANO 80/160 Semi	IGBT VOLCANO 80 Semi IMAGE SENSOR
Wavelength	515nm	515nm
Laser power	80W or 160W	80W
Laser line size	Up to 6mm x 40µm	36mm x 6µm
Process duration (pulse length)	250ns - 600ns	250ns - 600ns
Energy density	Variable, up to 4J/cm²	Variable, up to 2.5J/cm²
Throughput	Up to >60 wafers/h(6")	Up to >60 wafers/h (8")

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Long axis intensity profile

VOLCANO Optical Sub System

Optics Module

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♦ Laser Diffusion of Selective Emitters

- Low surface damage by Long Pulse green laser
- High throughput by using DOE multi spot(single scan concept)
- Homogeneous irradiation by using line beam

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